Mell Who is Dr Fujio Masuoka?
Fujio Masuoka (舛岡 富士雄, Masuoka Fujio, born May 8, 1943) is a Japanese engineer, who has worked for Toshiba and Tohoku University, and is currently chief technical officer (CTO) of Unisantis Electronics.
Was invented by DR Fujio Masuoka?
Fujio Masuoka, Professor Emeritus, Tohoku University in recognition of his invention of the world’s first “flash memory” technology, enabling large-capacity non-volatile semiconductor memories, and his major contributions to technical progress in that domain and to the numbers of persons entering it.
When was Fujio Masuoka born?
1943 (age 78 years)
Fujio Masuoka/Date of birth
Fujio Masuoka (F’00) was born on May 8, 1943, in Gunma, Japan. He received the B.E., M.E., and Ph. D. degrees in electrical engineering from Tohoku University in 1966, 1968, and 1971, respectively.
Who invented NAND flash?
Toshiba
Fujio Masuoka
Flash memory/Inventors
Who invented NAND?
When was flash memory invented?
1980
Techopedia Explains Flash Memory Flash memory was first introduced in 1980 and developed by Dr. Fujio Masuoka, an inventor and mid level factory manager at Toshiba Corporation (TOSBF). Flash memory was named after its capability to erase a block of data “”in a flash.” Dr.
Who invented DRAM?
Fujio Masuoka
Robert H. Dennard
Dynamic random-access memory/Inventors
What is NAND flash technology?
NAND Flash is a type of non-volatile storage technology that does not require power to retain data. An everyday example would be a mobile phone, with the NAND Flash (or the memory chip as it’s sometimes called) being where data files such as photos, videos and music are stored on a microSD card.
What is the full form of NAND?
It’s non-volatile, and you’ll find NAND in mass storage devices like USB flash drives and MP3 players. NAND memory is a form of electronically erasable programmable read-only memory (EEPROM), and it takes its name from the NAND logic gate.
What is NAND made of?
NAND memory cells are made with two types of gates, control and floating gates. Both gates will help control the flow of data. To program one cell, a voltage charge is sent to the control gate. Vendors in NAND flash memory include Samsung, Toshiba, Intel, Western Digital and Micron Technology.
What does NAND memory stand for?
Definition. NAND. Not And (electronic logic gate) NAND.
What did Fujio Masuoka do for a living?
Masuoka was excited mostly by the idea of non-volatile memory, memory that would last even when power was turned off. The EEPROM of the time took very long to erase. He developed the “floating gate” technology that could be erased much faster. He filed a patent in 1980 along with Hisakazu Iizuka.
When did Fujio Masuoka invent NOR flash?
The results (with capacity of only 8192 bytes) were published in 1984, and became the basis for flash memory technology of much larger capacities. Masuoka and colleagues presented the invention of NOR flash in 1984, and then NAND flash at the IEEE 1987 International Electron Devices Meeting (IEDM) held in San Francisco.
When did Fujio Masuoka invent the Sgt transistor?
Masuoka received the 1997 IEEE Morris N. Liebmann Memorial Award of the Institute of Electrical and Electronics Engineers. In 2004, Masuoka became the chief technical officer of Unisantis Electronics aiming to develop a three-dimensional transistor, based on his earlier surrounding-gate transistor (SGT) invention from 1988.
When did Fujio Masuoka become Chief Technical Officer of Unisantis?
In 2004, Masuoka became the chief technical officer of Unisantis Electronics aiming to develop a three-dimensional transistor, based on his earlier surrounding-gate transistor (SGT) invention from 1988. In 2006, he settled a lawsuit with Toshiba for ¥87m (about US$758,000).
Masuoka was excited mostly by the idea of non-volatile memory, memory that would last even when power was turned off. The EEPROM of the time took very long to erase. He developed the “floating gate” technology that could be erased much faster. He filed a patent in 1980 along with Hisakazu Iizuka.
How old was Fujio Masuoka when he invented flash memory?
Fujio Masuoka was born on May 8, 1943, in the city of Takasaki, Gunma, Japan, he is the inventor of flash memory. When he was 10, his mother encouraged him to study mathematics and hire a private teacher. By the time he was 12 years old, Masuoka managed to master mathematics.
What kind of transistor did Fujio Masuoka invent?
He also invented the first gate-all-around (GAA) MOSFET ( GAAFET) transistor, an early non-planar 3D transistor, in 1988. Masuoka attended Tohoku University in Sendai, Japan, where he earned an undergraduate degree in engineering in 1966 and doctorate in 1971. He joined Toshiba in 1971.
In 2004, Masuoka became the chief technical officer of Unisantis Electronics aiming to develop a three-dimensional transistor, based on his earlier surrounding-gate transistor (SGT) invention from 1988. In 2006, he settled a lawsuit with Toshiba for ¥87m (about US$758,000).